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13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of the West of Scotland
A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu2O/CuO thin films with resistive switching potential
This paper highlights how to overcome a current major challenge with the preparation of copper oxide and related transition metal oxides thin films using methods readily compatible with microelectronic processing like reactive magnetron sputtering, for the manufacture of non-volatile resistive random access storage devices for next generation mobile computing and communications applications. It is an extension of earlier work, A.A. Ogwu et al, Acta Materialia, J.Phys.D (2005), in combination with the KPZ universality class thin film growth model to predict and demonstrate conditions for attaining a core-shell necessary for resistive switching in Cu2O/CuO thin films.
