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Thermal conductivity measurement of porous silicon by the pulsed-photothermal method

• Porous silicon is proven to be a very promising material for the realisation of fully-integrated RF devices on silicon (monolithic integration).

• Thermal conductivity of the electrical insulating layer is of primary importance in device performance.

• First time a pulsed-photothermal method has been used to estimate thermal conductivity of mesoporous layer. Thermal conductivity one order of magnitude higher than glass was measured.

• This result led the way to the production of highly efficient RF devices integrated on silicon as an outcome from industrial collaboration with the Laboratoire de Microélectronique de Puissance and STMicroelectronics (Patrick Poveda).