Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors
Article demonstrates the simplest model to resolve a mathematical problem lasting over 40 years: Solution of the Poisson-Greens function for Coulomb scattering for an arbitrary number of layers. The model applicable to future CMOS facilitates a correlation of the location of traps with mobility thus allowing manufacturing processes to be qualified to isolate bulk traps. The model is unique in that it allows for a variation of dielectric constant along the stack. Resulted in contractual funding from a US Multinational for the development of sub 28 nanometer CMOS for alternative geometries/technologies and an invited talk in Montreal (ECS 2011).
