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13 - Electrical and Electronic Engineering, Metallurgy and Materials

Liverpool John Moores University

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Output 10 of 19 in the submission

Article title

Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs

Type

D - Journal article

DOI

10.1109/TED.2011.2177839

Title of journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Article number

Volume number

Issue number

First page of article

783

ISSN of journal

0018-9383

Year of publication

2012

URL

Number of additional authors

Additional information

* The first paper ever to demonstrate that States-Beyond-Bandgap (SBB) can be extracted quantitatively by the pulse capacitance–voltage technique.

* Significant as it revealed that mobility evaluated without considering SBBs can lead to underestimation by over 30% and the widely-observed nitrogen-induced mobility degradation is an artifact, opening a new way for device optimization.

* One reviewer of this paper commented ‘This manuscript is exceptionally well done with thorough analysis of experimental and modeling data’. The paper led to an invited paper at the “11th IEEE International Conference on Solid-State and Integrated Circuit Technology”.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract