Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
Investigation of Abnormal V-TH/V-FB Shifts Under Operating Conditions in Flash Memory Cells With Al2O3 High-kappa Gate Stacks
* The first paper ever that identified the abnormal VTH/VFB shift at low operating electric fields, caused by as-grown mobile charges in Al2O3 in Flash memory cells.
* Significant as its impacts on program/erase windows in Flash memory cells are revealed for the first time; critical for the development of novel memory dielectric materials.
* The results have been disseminated to industry companies, e.g. Intel/Micron. Dr Kirk Prall, The Director of Emerging Memories at Micron (kprall@micron.com) specifically asked for the technical details after the results presentation at IEDM 2011, so that the issues could be resolved in their product development.