Output details
15 - General Engineering
Nottingham Trent University
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Article title
Laser annealing of thin film electroluminescent devices deposited at a high rate using high target utilization sputtering
Type
D - Journal article
Title of journal
Semiconductor Science and Technology
Article number
-
Volume number
26
Issue number
4
First page of article
045016
ISSN of journal
1361-6641
Year of publication
2011
URL
-
Number of additional authors
5
Additional information
Combination of research from two TSB collaborative R&D projects [HESSLIS TP K2514K, Plasma Quest Ltd. and SRELD TP2/ED/6/S/10265, Ultra Electronics Ltd.] resulting in the demonstration of a low temperature deposition and fabrication technique for thin film electroluminescent display devices. The technique of combining the high rate sputtering and laser processing for optimisation of transparent semiconducting materials generated new collaboration with Cambridge University Engineering Dept. (A. Flewitt) for work on Zinc Oxide, and Knowledge Transfer Project with PragmatIC Printing Ltd. [sKTP1000722].
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
