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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Strathclyde

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Article title

Active snubber energy recovery circuit for series-connected IGBTs

Type
D - Journal article
Title of journal
IEEE Transactions on Power Electronics
Article number
-
Volume number
26
Issue number
7
First page of article
1879
ISSN of journal
0885-8993
Year of publication
2011
URL
-
Number of additional authors
2
Additional information

This research demonstrates theoretically and experimentally that high-efficiency, switching-aid, energy recovery circuits can be applied to series-connected high-voltage power semiconductors. This research contributed to further advances in power semiconductor switching and gate drive techniques which have been exploited through a collaborative research program with the Pulsed Power Group at the Atomic Weapons Establishment (AWE) [£118k, 2009-2013, Mark.Sinclair@awe.co.uk], and which led to development of gate drive and switch modules for solid-state X-ray flash radiography, as reported in an IEEE transactions publication [10.1109/TDEI.2013.6571428 ].

Interdisciplinary
-
Cross-referral requested
-
Research group
E - Institute for Energy and Environment (InstEE)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-