Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
Reports on the development of GaAs based quantum dots at 1550nm by molecular beam epitaxy and their use as a saturable absorber in high repetition rate lasers, carried out under the EU FP7 “Fast-dot” project. This work includes collaboration with ETH Zurich and Time-Bandwidth Products, a leading laser manufacturer. Such quantum dots have been the subject of intense research over recent years and this first realization of a laser at this important wavelength is a significant achievement. In addition to improved device performance, enhanced reliability is expected for the laser system, opening the way for higher repetition rate lasers.