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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Surrey

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Output 28 of 311 in the submission

Article title

A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Type

D - Journal article

DOI

10.1109/TED.2011.2160546

Title of journal

IEEE Transactions on Electron Devices

Article number

Volume number

Issue number

First page of article

3081

ISSN of journal

1557-9646

Year of publication

2011

URL

Number of additional authors

Additional information

The Q2D model developed in the paper provides very accurate simulation results for LDMOS devices in a fraction of the time of full 2D simulators, and as such is a powerful tool for use in non-linear CAD design for power amplifier applications. The approach is now being developed and used in-house by Freescale Semiconductor in Tempe, Arizona, who are one of the World’s largest manufacturers of high frequency, high power LDMOS devices for cellular telecommunications base stations. The benefits include greatly enhanced design flexibility and the systematic analysis of process variations.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract