Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Imperial College London : B - Metallurgy and Materials
Article title
Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
ARTN 082109
Volume number
94
Issue number
8
First page of article
-
ISSN of journal
0003-6951
Year of publication
2009
URL
-
Number of additional authors
5
Additional information
GaN thin films have huge potential for solid state lighting, however they are restricted by the lack of a cheap strain-free substrate. AlN has potential due to its low lattice and thermal mismatch but is difficult to form in large wafers. This work reports the first successful growth of a 120 micron-thick continuous AlN film with low residual stress and dislocation density(2x10-6 cm-2) using SiC pyramids. Contributed to award of the Silver Medal from the Institute of Materials. This has led to further funding for 3 years by the Swedish research council, grant No:2008-5753 (£210K) and to EPSRC EP/K028707/1 £0.66M.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
