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A novel route for the inclusion of metal dopants in silicon

This multidisciplinary research reports a novel process for implanting metal atoms in the near surface region of a silicon wafer with nanometer depth precision. Conventional techniques for doping, such as ion-implantation or thermal diffusion doping, are either destructive, time consuming, energy inefficient, or possess high thermal budgets, and lack depth precision. This specific approach, whereby a deep UV radiation source photodissociates ultrathin molecular layers provides proof-of-principle for a new nano-engineering technology that could lead to ordered arrays on an atomic scale. This work was delivered in an invited paper at the Photonics West conference in San Francisco in 2010.