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NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

This paper first appeared at the ULIS (Ireland) conference and was subsequently invited for publication in Solid state electronics journal, as it showed that extremely scaled junctionless transistors with channel lengths smaller than 20 nm and 5x5 nm2 cross section have large variability due to random dopant fluctuations. These junctionless devices appear as an attractive alternative to conventional junction MOSFET transistors in future device miniaturisation.