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Output details

9 - Physics

University of Nottingham

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Article title

Electron tunneling through ultrathin boron nitride crystalline barriers

Type

D - Journal article

DOI

10.1021/nl3002205

Title of journal

Nano Letters

Article number

Volume number

Issue number

First page of article

1707–171

ISSN of journal

1530-6984

Year of publication

2012

URL

http://pubs.acs.org/doi/abs/10.1021/nl3002205

Number of additional authors

Additional information

Eaves used his expertise on charge build-up and electron tunnelling in semiconductor devices to contribute to the analysis and interpretation of the experimental data shown in Figures 2, 3 and 4. He also contributed to the preparation of the manuscript for publication.

Interdisciplinary

Cross-referral requested

Research group

D - Experimental Condensed Matter and Nanoscience

Citation count

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract