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15 - General Engineering

University of Cambridge

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Article title

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

Type

D - Journal article

DOI

10.1063/1.3569702

Title of journal

Journal of Applied Physics

Article number

084521

Volume number

Issue number

First page of article

ISSN of journal

00218979

Year of publication

2011

URL

Number of additional authors

Additional information

These results led to collaborations with Kodak/LG Displays in active matrix organic displays and subsequently helped in developing significant new relationships, including with Samsung. The technology, comprising over 25 patents issued, was transferred to IGNIS Innovation Inc. (www.ignisinnovation.com).

The work is integral to EPSRC's 5-year CIM Award in Large Area Electronics (GBP5.6M-Oct 2013-Nathan's share GBP370k). The significance of the technology is highlighted by a number of invited and distinguished IEEE lectures (AMFPD2012, AsiaSID2011, ECS2011, ASQED2011) and the first book in the area (www.cambridge.org/aus/catalogue/catalogue.asp?isbn=9781107012332).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract