Output details
15 - General Engineering
University of Cambridge
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Output 0 of 0 in the submission
Article title
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Type
D - Journal article
Title of journal
Nature Nanotechnology
Article number
-
Volume number
3
Issue number
4
First page of article
210
ISSN of journal
1748-3387
Year of publication
2008
URL
-
Number of additional authors
10
Additional information
First demonstration of top gated graphene transistors via polymer electrolytes and that Raman can be used for non-destructive monitoring of doping. A number of plenary, keynote and invited talks at major international conferences (for example Keynote in Graphene 2013 conference Bilbao, and Plenary in EMRS 2011 in Strasbourg). EPSRC RG54032 (GBP341k) and RG68351 (GBP3M) funded as a result, as well as EUR1Bn graphene flagship (~EUR2M to Cambridge in the next 2.5 years). Used by Samsung, IBM, Aixtron, Intel, BASF, Nokia to evaluate doping levels (ID_in_audit_file@aixtron.com; ID_in_audit_file@us.ibm.com).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-