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15 - General Engineering

University of Cambridge

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Article title

Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

Type

D - Journal article

DOI

10.1038/nnano.2008.67

Title of journal

Nature Nanotechnology

Article number

Volume number

Issue number

First page of article

210

ISSN of journal

1748-3387

Year of publication

2008

URL

Number of additional authors

Additional information

First demonstration of top gated graphene transistors via polymer electrolytes and that Raman can be used for non-destructive monitoring of doping. A number of plenary, keynote and invited talks at major international conferences (for example Keynote in Graphene 2013 conference Bilbao, and Plenary in EMRS 2011 in Strasbourg). EPSRC RG54032 (GBP341k) and RG68351 (GBP3M) funded as a result, as well as EUR1Bn graphene flagship (~EUR2M to Cambridge in the next 2.5 years). Used by Samsung, IBM, Aixtron, Intel, BASF, Nokia to evaluate doping levels (ID_in_audit_file@aixtron.com; ID_in_audit_file@us.ibm.com).

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract