Output details
15 - General Engineering
University of Cambridge
Return to search
Output 0 of 0 in the submission
Article title
Maximizing performance for higher K gate dielectrics
Type
D - Journal article
Title of journal
J APPL PHYS
Article number
124111
Volume number
104
Issue number
12
First page of article
124111
ISSN of journal
0021-8979
Year of publication
2008
URL
-
Number of additional authors
0
Additional information
This research in this paper has contributed to the ITRS (International Technology Roadmap for Semiconductors) road map for future high dielectric constant (K) gate oxides for transistors. The FET has recently undergone one of its biggest technology changes with the replacement of SiO2 by high K oxides such as HfO2. This and related papers on high K oxides has resulted in Robertson being elected to a Fellowship of IEEE and an EPSRC grant EP/J011592/1 of GBP280k (start June 2012).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
