Output details
15 - General Engineering
University of Cambridge
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Article title
Model of interface states at III-V oxide interfaces
Type
D - Journal article
Title of journal
APPL PHYS LETT
Article number
152104
Volume number
94
Issue number
15
First page of article
152104
ISSN of journal
0003-6951
Year of publication
2009
URL
-
Number of additional authors
0
Additional information
This research provided the basis to solve a 30 year outstanding problem of how to passivate the interfaces of III-V semiconductors, enabling III-Vs to be used in MOSFETs in the same way as Si for future integrated circuits. It has led to an EPSRC grant (EP/I014047/1) valued at GBP282k, start date Jul 2011. This paper has led to 7 invited talks at major international conferences including IEDM/IEEE (Dec 2009), MRS (Spring 2010, 2011), APS (March 2012), INFOS (Grenoble, July 2011) and PCSI (Jan 2012) and to Robertson's election to a Fellowship of the Materials Research Society (2010).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
