Output details
15 - General Engineering
University of Liverpool
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Article title
Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy
Type
D - Journal article
Title of journal
Physical Review B
Article number
035302
Volume number
82
Issue number
3
First page of article
-
ISSN of journal
1550-235X
Year of publication
2010
URL
-
Number of additional authors
10
Additional information
The research led to a manufacturing route for cubic GaAs nanowires that were previously unattainable. A Marie Curie Initial Training Network action “NanoEmbrace – Embracing One Dimensional Semiconductor Nanostructures”, has followed on from this in partnership with colleagues from France, Switzerland, Italy and Russia (evidence file: Durose2-1).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
