Output details
15 - General Engineering
University of Liverpool
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Article title
Permittivity enhancement of hafnium dioxide high-K films by cerium doping
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
-
Volume number
93
Issue number
18
First page of article
182911
ISSN of journal
00036951
Year of publication
2008
URL
-
Number of additional authors
9
Additional information
Realisation of permittivity enhancement by doping of hafnia using an atomic layer deposition manufacturing process. The work led to a further EPSRC project EP/I012907/1 on high-K dielectrics for germanium-based electronics (evidence file Chalker1-1.pdf). The work was also supported financially by SAFC Hitech. Sigma Aldrich patent applications WO2009143456(A1) (evidence file Chalker1-2.pdf), and WO2009143452(A1) (evidence file Chalker1-3.pdf) arose from the original research. The research was presented in an invited talk at 5th International Workshop on High-Resolution Depth Profiling, Kyoto, Japan, Nov 2009 (evidence file Chalker1-4.pdf).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
