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Single lateral mode mid-infrared laser diode using wavelength-scale modulation of the facet reflectivity

For semiconductor lasers used in communications and sensing there is often a requirement for high emitted powers, usually achieved via wide emitting areas. However, this leads to a complicated mode structure (lasing occurring at different wavelengths/places), whereas many applications require single mode operation. As a solution, this paper demonstrates for the first time sub-wavelength metallic structures which are able to control the emitted modes from broad area semiconductor laser diodes. It is now being extended in collaboration with BAESystems (contact Dr Craig Stacey, Craig.Stacey@baesystems.com) in a new EPSRC responsive mode project (£645k, EP/J011932/1).