Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Imperial College London : B - Metallurgy and Materials
Return to search
Output 0 of 0 in the submission
Article title
Dislocation movement in GaN films
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
ARTN 261907
Volume number
97
Issue number
26
First page of article
-
ISSN of journal
0003-6951
Year of publication
2010
URL
-
Number of additional authors
4
Additional information
This paper revealed new mechanisms of dislocation movement in III-nitrides which dominate dislocation behaviour in these materials and influence device efficiencies. This work led to a SET for Britain award (Physics) 2010 for MA Moram (lead author) and subsequently to a Leverhulme Research Leadership Award 2012, the collaborative EPSRC grant EP/J003603/1, appointment to the International Steering Committee of the well-established International Conference on Defects in Semiconductors and a forthcoming invited review in International Materials Reviews.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-