Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Cambridge
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Article title
Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
Type
D - Journal article
Title of journal
APPL PHYS LETT
Article number
021906
Volume number
99
Issue number
2
First page of article
021906
ISSN of journal
0003-6951
Year of publication
2011
URL
-
Number of additional authors
6
Additional information
This paper describes a very challenging experiment in which an InGaN quantum-well sample which had been examined in transmission electron microscopy (TEM) was assessed by atom probe. The validity of TEM data on InGaN remains controversial and Compound Semiconductor Magazine described our new data as providing a “compelling” insight into this issue (http://compoundsemiconductor.net/csc/features-details.php?cat=features&id=19734104). Atom-probe expert, Peter Clifton (Peter.Clifton@ametek.com), wrote to Oliver to say “I am very glad that someone has finally published this comparison”.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-