Output details
15 - General Engineering
De Montfort University
Article title
A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
55
Issue number
5
First page of article
1109
ISSN of journal
0018-9383
Year of publication
2008
URL
-
Number of additional authors
3
Additional information
The research in this output has led to an invited paper request for the IEEE Transactions on Device and Materials Reliability 8 (2), art. no. 4431832, pp. 277. Moreover, the methods in the paper used to compare two industrially-relevant insulator materials and elucidate possible causes of instability continue to be used as a benchmark for discussion in this area (e.g., DOI: 10.1063/1.3580614 and DOI: 10.1109/TED.2011.2172212).
Interdisciplinary
-
Cross-referral requested
-
Research group
D - Emerging Technologies Research Centre (EMTERC)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
