Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Manchester : B - Electrical and Electronic Engineering
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
This work provided a mechanism for the technologically important issue of light-induced degradation of crystalline-silicon solar cells. The paper reports concentration dependence interstitial oxygen in p- and n-type Czochralski-Si, and shows that the charge-state-driven motion of the oxygen dimer does not occur. This finding has led to better understanding of the role of thermal donors in light induced degradation (DOI: 10.1063/14759245); enhancement of carrier lifetimes in silicon by SiO2-passivation (DOI:10.1063/1.3641822); and lateral diffusion mechanisms for defects in silicon (DOI:10.1063/1.4716181). The processes identified have also contributed to understanding the observed effects of annealing on Boron-Oxygen defects in Si (DOI: 10.1063/1.3633492)
