Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Manchester : B - Electrical and Electronic Engineering
Article title
THz operation of asymmetric-nanochannel devices
Type
D - Journal article
Title of journal
Journal of Physics: Condensed Matter
Article number
-
Volume number
20
Issue number
38
First page of article
384203
ISSN of journal
0953-8984
Year of publication
2008
URL
-
Number of additional authors
3
Additional information
Transistors and diodes generally stop working at hundreds of GHz due to the RC time constant. These conventional devices are based on multi-layered architectures, and hence at least some of the electrodes and the semiconductor layer are placed in parallel to each other, causing a large capacitance. In this novel device concept, the electrodes are placed in the same plane as the semiconductor layer, dramatically reducing the parasitic capacitance and enabling an order of magnitude increase in speed to 2.5 THz . The work has informed research at, e.g. Philips Res and IMAC (DOI: 10.1063/1.3655369) and Rochester (DOI: 10.1063/1.3330742).
Interdisciplinary
-
Cross-referral requested
-
Research group
Z - Microelectronics and Nanostructures
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
