Output details
15 - General Engineering
University of Warwick
Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics : an application to oxide precipitates in silicon
Selected as a “Research Highlight” by the Editor, this paper provides a methodology for extracting fundamental parameters of defects in any semiconductor from minority carrier lifetime data. The methodology is applied to findings from an international consortium led by Murphy published in this journal previously (DOI: 10.1063/1.3632067 (2011); DOI: 10.1063/1.3675449 (2012)). The data and methodology are being used by SunEdison (previously MEMC) to improve silicon materials for integrated circuits and high efficiency silicon solar cells (Robert Falster; rfalster@sunedison.it).
