Output details
15 - General Engineering
University of Warwick
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Article title
Performance enhancements in scaled strained-SiGe pMOSFETs with HfSiOx/TiSiN gate stacks
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
56
Issue number
10
First page of article
2277
ISSN of journal
0018-9383
Year of publication
2009
URL
-
Number of additional authors
4
Additional information
This paper was the result of industrial collaboration with SEMATECH , which is an industrial leader in applied research in semiconductor nanoelectronics. This paper contributed towards the successful evaluation of high-k dielectric integration with high mobility channels in advanced CMOS devices. The CMOS industry has now migrated fully to hafnium silicate as a gate dielectric replacing silicon dioxide and this paper, authored with collaborators for SEMATECH USA, was amongst the papers that studied and characterised the new CMOS gate insulators. Prashant Mahji was a co-author and his email is p.mahji@sematech.org
Interdisciplinary
-
Cross-referral requested
-
Research group
3 - Electrical Power
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
