Output details
15 - General Engineering
University of Warwick
Article title
Ohmic contacts to n-type germanium with low specific contact resistivity
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
-
Volume number
100
Issue number
2
First page of article
022113
ISSN of journal
00036951
Year of publication
2012
URL
-
Number of additional authors
5
Additional information
A low temperature nickel process has been developed that produces Ohmic contacts to n-type Germanium with the lowest reported specific contact resistivity. This result is particularly significant as high contact resistance typically limits the performance of a large variety of Ge based electronic and photonic nano-scale devices. The work was in collaboration with Glasgow University as part of an EPSRC project EP/G041229/1 on resonant tunnelling diodes. The key advance leading to low-resistivity contacts was epitaxial growth of Ge with a very high level of electrically active n-type dopants.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
