Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : B - Materials Science and Engineering
Energy selective scanning electron microscopy to reduce the effect of contamination layers on scanning electron microscope dopant mapping
Integrated circuit metrology is critical for quality control of feature size reduction in the semiconductor industry, heavily dependent on advanced SEM. This work reports a breakthrough method for improving dopant mapping resolution from 30nm down to 3nm, greatly reducing the feature size that can be characterized. Undertaken as part of the European network EUREKA project 3963, in collaboration with FEI (a world-leading supplier of in-line metrology SEMs). This energy-selection method was developed with FEI and is now available on FEI microscopes (contact Seyno.Sluyterman@fei.com) and energy selection is independently identified as a key future research area [DOI:10.1002/sca.20255 & 10.1093/jmicro/dfs048].
