Output details
15 - General Engineering
University of Cambridge
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Article title
DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT
Type
D - Journal article
Title of journal
SOLID STATE ELECTRON
Article number
-
Volume number
54
Issue number
6
First page of article
616
ISSN of journal
0038-1101
Year of publication
2010
URL
-
Number of additional authors
2
Additional information
This is the first paper to propose a memory effect in Gallium-Nitride based devices using a High Electron Mobility Transistor (HEMT). Cambridge Enterprise (the commercialising arm of UCAM) has received GBP75k from NXP Semiconductor Belgium (A6433, 1 Oct 2010 - 30 Sept 2013) to work on high voltage GaN HEMTs and GBP150k from Vishay Semiconductor (A8171) to work on GaN Schottky diodes (1 Jan 2013 - 30 Dec 2015) (ID_in_audit_file@enterprise.cam.ac.uk). Udrea was invited to the Power Electronics, European Power Electronics Centre (ECPE) Workshop in Munich 2010 to discuss GaN and Silicon devices for high voltage technologies.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
