Output details
15 - General Engineering
University of Cambridge
DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT
This is the first paper to propose a memory effect in Gallium-Nitride based devices using a High Electron Mobility Transistor (HEMT). Cambridge Enterprise (the commercialising arm of UCAM) has received GBP75k from NXP Semiconductor Belgium (A6433, 1 Oct 2010 - 30 Sept 2013) to work on high voltage GaN HEMTs and GBP150k from Vishay Semiconductor (A8171) to work on GaN Schottky diodes (1 Jan 2013 - 30 Dec 2015) (ID_in_audit_file@enterprise.cam.ac.uk). Udrea was invited to the Power Electronics, European Power Electronics Centre (ECPE) Workshop in Munich 2010 to discuss GaN and Silicon devices for high voltage technologies.