Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47As Implant Free Quantum Well MOSFET
* The first paper ever to propose and analyse a new In0.53Ga0.47 implant-free quantum-well (IFQW) MOSFET architecture.
* Significant as it demonstrates that the IFQW is a promising candidate for the future CMOS technology with better electrostatic integrity, much lower sensitivity to the interface states density, and larger drive current than the conventional devices.
* The results have been disseminated widely through one of the largest European Commission (EC) research projects (FP7) DUALLOGIC involving eight organisations, e.g IBM, ST Microelectronics, AIXTRON, IMEC (Marc Meuris, Program Manager, meuris@imec.be) and have led to the fabrication of the first IFQW device.