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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Bath

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Article title

Light emission from InGaN quantum wells grown on the facets of closely spaced GaN nano-pyramids formed by nano-imprinting

Type

D - Journal article

DOI

10.1143/APEX.2.121002

Title of journal

Applied Physics Express

Article number

121002

Volume number

Issue number

First page of article

ISSN of journal

1882-0778

Year of publication

2009

URL

http://dx.doi.org/10.1143/APEX.2.121002

Number of additional authors

Additional information

This is the first paper reporting the study of textured LEDs in closely-spaced nano-patterns. One textured-LED patent was generated from this research (US 7915622), as were three device-related patents were generated allowing manufacturing technology to be optimised (UK 2436398, UK 2446471, UK 2470097). The IP generated was licensed to Arima Optoelectronic Corporation for commercial production of high-power light emitting diodes. This work resulted in an invited talk being given at the international SPIE 2010 meeting.

Interdisciplinary

Cross-referral requested

Research group

A - Advanced Sensor Technologies

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract