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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Liverpool

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Article title

Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation

Type

D - Journal article

DOI

10.1016/j.sse.2009.02.016

Title of journal

Solid-State Electronics

Article number

Volume number

Issue number

First page of article

753

ISSN of journal

00381101

Year of publication

2009

URL

Number of additional authors

Additional information

The paper presents key steps to mitigate parasitic overlap capacitance and improve channel quality in short-channel vertical MOSFET devices. The work was a collaboration with University of Southampton and PlesseySemiconductors. Project results were featured in Europhysicsnews, Vol.43(4) – Highlights, and a related paper was selected for IoP Select as it offers “A degree of novelty and significant impact on future research” (http://iopscience.iop.org/collections?collection_type=SELECT) . The work, developed in an earlier EPSRC funded project, continued in EP/E012078/1.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract