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13 - Electrical and Electronic Engineering, Metallurgy and Materials
University College London
Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
The high-efficiency and low-cost, multi-junction solar cells require lattice-mismatched growth of high-bandgap III-V compounds on silicon substrates. The use of III-V nanowires is the only known method for circumventing these lattice-matching constraints to develop growth of nanowires with bandgaps >1.4 eV for >40% efficiency. In this work, we demonstrated the first GaAsP nanowires grown on silicon by means of direct epitaxial growth, and presented a record efficiency of 10.2% for a core-shell single-nanowire solar cell. This work laid the foundation for VC investment (£375k) in the startup company Gasp Solar and a successful application for a UCL Impact Studentship project.
