Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University College London
Boron δ-doped (111) diamond solution gate field effect transistors.
Diamond is difficult to dope; this showed that (111) could be used to achieve ultra-thin (1nm) boron-doped layers that act as δ-structures with enhanced mobility, and that FETs could be produced for biosensing. Collaboration with a leading international University (Waseda, Japan). Led to award of Japan Society for Promotion of Science Fellowship for UCL-PhD to spend 6-months at Waseda. Following, DMD Ltd (SME) supported CASE-PhD to develop this device for biosensing. This paper led to a new collaboration with UCL Hospital (Indermuehle), for diamond-FET for real-time monitoring of blood-agents that indicate the onset of a heart attack. Media, http://www.nanowerk.com/news/newsid=25052.php, http://www.rdmag.com/News/2012/04/Materials-Nanotechnology-Processing-Doped-diamond-structures-offer-promise-for-biotech-applications/