Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect
* The first paper ever to propose a framework for stress-induced positive charges in Hf-based gate dielectrics, the new material selected by Intel for its latest generation of CMOS technology.
* Significant as it laid the scientific foundation for developing new techniques for predicting device lifetime caused by negative bias temperature instabilities, needed by the industry.
* The knowledge gained from this work led to the award of an EPSRC research grant “High permittivity dielectrics on Ge for end of Roadmap application” (Grant No: EP/I012966/1, £462k), together with Cambridge and Liverpool Universities.