Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Liverpool
Article title
Electron trapping at the high-k/GeO2 interface: The role of bound states
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
-
Volume number
102
Issue number
9
First page of article
092103
ISSN of journal
00036951
Year of publication
2013
URL
-
Number of additional authors
4
Additional information
This paper is aimed at the next generation of advanced high-k dielectrics on germanium, and it anticipates the effect of a potential well formed at the native GeO2/high-k interface on device stability. This paper was supported by an EPSRC project (EP/1012907/1) awarded to Liverpool, Cambridge and LJMU in 2010. The work instigated further papers presented at EMRS’2013 and INFOS’2013 conferences, and an invitation to join a consortium led by Tyndall, UCC.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-