Output details
15 - General Engineering
Swansea University
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Article title
Control of roughness at interfaces and the impact on charge mobility in all-polymer field-effect transistors
Type
D - Journal article
DOI
Title of journal
Soft Matter
Article number
-
Volume number
4
Issue number
11
First page of article
2220
ISSN of journal
1744-683X
Year of publication
2008
URL
-
Number of additional authors
8
Additional information
This project was a collaboration with Prof H. Sirringhaus FRS (Physics, Cambridge) and was led by A. M. Higgins. This project involved structural studies in Swansea/central facilities (funded by STFC PI A. M. Higgins) and electronic device fabrication/characterisation in Cambridge. The work used a novel methodology to control interfacial roughness via solvent quality, and demonstrated the influence of roughness on charge mobility at a buried all-polymer semiconducting/dielectric interface within a field-effect transistor.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Multidisciplinary Nanotechnology Centre
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-