Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Queen's University Belfast
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Article title
Electrical characterization of ALD Al2O3 and HfO2 films on germanium
Type
D - Journal article
Title of journal
ECS Transactions
Article number
-
Volume number
28
Issue number
1
First page of article
201
ISSN of journal
1938-5862
Year of publication
2010
URL
-
Number of additional authors
6
Additional information
This paper summarises the key results of the germanium MOS gate stack development carried out as part of the EPSRC-funded GEMS contract (EP/E030130/1), which included Oxford Instruments and IceMOS Technology Ltd as industrial partners. Both Al2O3 and HfO2 high-K dielectrics, deposited by atomic layer deposition, are characterised using detailed electrical measurements, before and after post-metal anneals. The use of an interfacial GeON layer enhanced the thermal stability of Al2O3-based gate stacks. The GeON layer is conveniently produced by in-situ plasma nitridation in the ALD reactor.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - High Frequency Electronics (HFE)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-