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Output details

15 - General Engineering

University of Exeter

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Article title

Crystallization of Ge2Sb2Te5 films by amplified femtosecond optical pulses

Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
-
Volume number
112
Issue number
12
First page of article
123526
ISSN of journal
00218979
Year of publication
2012
URL
-
Number of additional authors
4
Additional information

Article presented new experimental and theoretical evidence of data storage in Ge:Sb:Te thin films using multiple femtosecond laser pulses. Work was supported by EPSRC grant (EP/F015046/1) in collaboration with STMicroelectronics (Italy), Plasmon Data Systems Ltd (Cambridge) and RWTH-Aachen (Germany). Work revealed a new role of multiple pulse operation in bypassing material constraints for the production of next generation of phase-change memories and microprocessors, and uncovered a new indirect method of estimating the growth velocity in phase-change materials (impacts switching speed and data retention of devices). Lead to successful funding of EPSRC project (EP/J018783/1) on mixed mode switching in phase-change media.

Interdisciplinary
-
Cross-referral requested
-
Research group
2 - The Functional Materials Group
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-