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Surface electron accumulation and the charge neutrality level in In(2)O(3)

This work utilizes high-quality, epitaxial thin films of indium oxide coupled with x-ray photoelectron spectroscopy and Hall effect measurements. From this it was determined that there was significant surface electron accumulation in indium oxide a discovery that corrected the prevailing belief that In2O3 displays surface electron depletion. The need to understand two-dimensional surface electronic states in oxide materials is important for designing and engineering new gas sensors. This work contributed to a successful EPSRC grant for a high pressure photoelectron spectrometer, an instrument capable of studying the surface electronic structure of materials under "real-world" conditions (£1.2m - EP/J021199/1 and EP/K004913/1).