Output details

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

This paper reports a novel cold-cap epitaxial growth technique, invented at Lancaster, and its successful application in fabricating high quality type II GaSb/GaAs QDs nanostructures. The originality of the work is to suppress the severe As/Sb exchange in arsenide/antimonide materials system to maintain the GaSb QDs under As flux. We hence demonstrate, for the first time, the use of such QD materials for high efficiency solar cells with extended photoresponse into near-infrared spectral range. This work led to a subsequent EU grant: FP7 Marie Curie Actions in developing InSb and GaSb QDs for solar cells and lasers.