Output details
15 - General Engineering
Lancaster University
Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
First demonstration of a dilute nitride (InAsSbN) quantum well (QW) LED operating at room temperature within the technologically important 3-4 µm spectral range. This paper presented a breakthrough in the molecular beam epitaxial growth (MBE) of InAsSbN QWs to produce material of sufficiently high quality (achieved through optimization of the growth conditions), and detailed analysis on the devices provided new information about the QW bandstructure. The research was supported by QinetiQ and the USA Army Research Laboratory (ARL) (Stefan Svensson). This led to new collaborations with the Army Research Laboratory (through RAEng Fellowship) and funding from EPSRC (EP/J015849/1).