Output details
15 - General Engineering
Lancaster University
Return to search
Output 0 of 0 in the submission
Article title
Room temperature photoluminescence at 4.5 mu m from InAsN
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
-
Volume number
103
Issue number
6
First page of article
063520
ISSN of journal
0021-8979
Year of publication
2008
Number of additional authors
4
Additional information
Funded by EPSRC and in collaboration with Hull, Sheffield, National Taiwan University, and Kidde plc. this research presents the successful MBE growth of a novel class of semiconductor – the dilute nitrides. It is the first demonstration of narrow bandgap InAsN alloy with high N content and room temperature photoluminescence up to 4.5 um and opens new routes for realising advanced MIR optoelectronics. It has led to follow-on EPSRC grants to develop mid-infrared lasers and photodetectors (EP/J015849/1 with Sheffield, Nottingham, Selex Galileo and CST Ltd) and Quantum Dot Materials for Solar Cells (EP/G070334/1, Collaborative Research in Energy with South Africa).
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Micro-Nano Systems
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
