Output details
15 - General Engineering
University of Bristol
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Output 0 of 0 in the submission
Article title
Electronic structure of In1-xGaxAs quantum dots via finite difference time domain method
Type
D - Journal article
Title of journal
Physical Review B
Article number
-
Volume number
77
Issue number
24
First page of article
245318
ISSN of journal
1098-0121
Year of publication
2008
Number of additional authors
1
Additional information
III-V compound semiconductor Quantum Dot (QD) structures are used to great effect for high performance lasers in optical-fibre communications systems. Designing these lasers requires accurate computer models that account for non-uniform distributions of size, shape and composition of Quantum Dots. Paper develops novel approach to this computational problem using finite-difference time-domain method. Model is validated by solving for energy levels of QDs and comparing results with other methods and experimental data. Model is central element of EPSRC grant "Semiconductor III-V Quantum-Dot Solar Cells on Silicon Substrates" (EP/K029665/1, £357k, 2013-6).
Interdisciplinary
-
Cross-referral requested
-
Research group
H - Photonics
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
