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Density of states for dilute nitride systems: calculation of lifetime broadening

Gallium (Indium) Arsenide Nitride is unusual semiconductor that has tunable properties. This is of great interest because it allows operation at 1.3 µm wavelength, an advantageous propagation window in optical fibres. Tuning behaviour was previously modelled using a band anti-crossing model but this does not accurately predict gain of optical amplifiers that use this material. Paper describes, for first time, more fundamental approach that solves this problem. Approach has subsequently been adopted in publications by several groups (Universities of Essex and Cork).