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High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

This paper demonstrates low operating voltage (<6V), high electron-mobility (85 (cm^2)/V/s), thin-film transistors based on ZrO2 dielectric and Li-doped ZnO semiconductor layers. Processed at 400oC, devices are assembled by sequential deposition of the dielectric and semiconductor using spray pyrolysis and blends of Zn/Li acetate precursors. This ultra-simple technique represents a significant step towards development of low-cost, large-area oxide electronics, whose main bottleneck is the process temperature limiting the type of substrates used. EPSRC-funded (EP/F023200), the work is the subject of a patent application (US20110113859 A1) and has generated follow-on funding from M-Solv Ltd for spray coating deposition of solar panels.