You are in : Home » Results & submissions » Select UOA » 13 - Electrical and Electronic Engineering, Metallurgy and Materials » View submission: University College London » Outputs » Detail

Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University College London

Return to search Previous output Next output

Output 23 of 151 in the submission

Article title

Boron δ-doped (111) diamond solution gate field effect transistors.

Type

D - Journal article

DOI

10.1016/j.bios.2011.12.044

Title of journal

Biosensors and Bioelectronics

Article number

Volume number

Issue number

First page of article

152

ISSN of journal

1873-4235

Year of publication

2012

URL

Number of additional authors

Additional information

Diamond is difficult to dope; this showed that (111) could be used to achieve ultra-thin (1nm) boron-doped layers that act as δ-structures with enhanced mobility, and that FETs could be produced for biosensing. Collaboration with a leading international University (Waseda, Japan). Led to award of Japan Society for Promotion of Science Fellowship for UCL-PhD to spend 6-months at Waseda. Following, DMD Ltd (SME) supported CASE-PhD to develop this device for biosensing. This paper led to a new collaboration with UCL Hospital (Indermuehle), for diamond-FET for real-time monitoring of blood-agents that indicate the onset of a heart attack. Media, http://www.nanowerk.com/news/newsid=25052.php, http://www.rdmag.com/News/2012/04/Materials-Nanotechnology-Processing-Doped-diamond-structures-offer-promise-for-biotech-applications/

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract