Output details

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Silicon-based lasers have been considered the holy grail of Si photonics because of the difficulty in fabrication and its importance in silicon photonics. This is the first report of an electrically-pumped 1.3-μm InAs/GaAs quantum-dot laser monolithically grown on silicon substrate, which is an essential step towards the monolithic integration of quantum-dot lasers on silicon. This work led to 5 invited talks [such as IEEE Photonics Conference 2012 and 7th International Conference on Materials for Advanced Technologies], new collaborations with Sheffield, Cardiff, Warwick Universities, industrial collaboration with Oclaro, and the successful application of an EPSRC grant (EP/J012904/1, £652,595, PI: Liu).