Output details
15 - General Engineering
University of Glasgow
AlN/GaN MOS-HEMTs with thermally grown Al2O3 passivation
This paper describes the processing and characterisation of a new GaN FET technology employing an AlN barrier layer. The technology is expected to enable compact and highly efficient radar systems for commercial and military applications. The GaN FET is also a potential replacement for magnetrons in domestic microwave ovens, being lighter and offering higher efficiency. The work was a factor in securing a Ministry of Defence contract (DSTLX-1000064098) and the EPSRC-funded UK National Project on "Silicon-compatible GaN Power Electronics" (EP/K014471/1 - £6.19M). The latter project, comprising 6 other UK universities and over 10 UK semiconductor manufacturers, is led by Glasgow.